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Same model may have multiple batches, images only for reference.
FQU11P06TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU11P06TU

Part No FQU11P06TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 9.4A IPAK
Datasheet
FQU11P06TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 38W (Tc)
Maximum Rds On at Id,Vgs 185 mOhm @ 4.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1039979-FQU11P06TU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FQU11P06TU CAD Model

Description

The Fairchild/ON Semiconductor FQU11P06TU is a P-Channel MOSFET transistor with a maximum power dissipation of 2.5W (Ta) and 38W (Tc).

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 9.4A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 185 mOhm @ 4.7A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Maximum Gate-Source Voltage: ±30V

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