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FQU1N60TU

Part No FQU1N60TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1A IPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 11.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1039985-FQU1N60TU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQU1N60TU CAD Model

Description

This electronic component is a MOSFET technology manufactured by Fairchild/ON Semiconductor.

  • Win Source Part Number: 1039985-FQU1N60TU
  • Package: Tube/Rail
  • Mounting: Through hole
  • Polarity: N-Channel
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Category: Discrete Semiconductor Products
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: I-Pak
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 1A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 6nC @ 10V
  • Max Input Capacitance: 150pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 11.5 Ohm @ 500mA, 10V
  • Supply and Demand Status: Sufficient

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