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FQU3N50CTU

Part No FQU3N50CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 365pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1039995-FQU3N50CTU
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FQU3N50CTU CAD Model

Description

The Fairchild/ON Semiconductor 1039995-FQU3N50CTU is an N-channel MOSFET.

  • Maximum Power Dissipation: 35W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 2.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Rds On @ Id, Vgs: 2.5 Ohm @ 1.25A, 10V
  • Case/Package: I-Pak
  • Dimensions: TO-251-3 Short Leads, IPak, TO-251AA
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package Quantity: 5,040

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7694 $61.5520
185+ $0.6313 $116.7905
285+ $0.6116 $174.3060
395+ $0.5918 $233.7610
505+ $0.5722 $288.9610
680+ $0.5130 $348.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,040 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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