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Same model may have multiple batches, images only for reference.
HGT1S10N120BNST Real Image
Same model may have multiple batches, images only for reference.

HGT1S10N120BNST

Part No HGT1S10N120BNST
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 35A 298W TO263AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 35A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 10A
Maximum Power Dissipation 298W
Total Switching Energy(Ets) 320μJ (on), 800μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 23ns/165ns
Testing Conditions 960V, 10A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263AB
Win Source Part Number 134811-HGT1S10N120BNST
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HGT1S10N120BNST CAD Model

Description

The supply and demand status is limited. This component is an insulated gate bipolar transistor (IGBT) that can be used in electronic circuits to switch high voltages and currents. It is manufactured by Fairchild/ON Semiconductor and has a Win Source Part Number of 134811-HGT1S10N120BNST. The IGBT has a collector-emitter breakdown voltage of 1200V and a maximum collector current of 35A.

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18+ $6.7674 $121.8132
27+ $6.5559 $177.0093
37+ $6.3444 $234.7428
48+ $6.1330 $294.3840
64+ $5.4985 $351.9040
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Availability: 32,000 pieces
MOQ: 8 pcs
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