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Same model may have multiple batches, images only for reference.
HUF75321P3 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF75321P3

Part No HUF75321P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 35A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 20V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 007523-HUF75321P3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HUF75321P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75321P3 MOSFET is a N-Channel device with a Drain-Source Breakdown Voltage of 55V and a Continuous Drain Current of 35A at 25°C.

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 34 mOhm @ 35A, 10V
  • Power Dissipation (Max): 93W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220AB
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Packaging: Tube/Rail with a quantity of 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9053 $58.8445
160+ $0.7429 $118.8640
245+ $0.7197 $176.3265
335+ $0.6965 $233.3275
430+ $0.6733 $289.5190
575+ $0.6036 $347.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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