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Same model may have multiple batches, images only for reference.
HUF75542S3S Real Image
Same model may have multiple batches, images only for reference.

HUF75542S3S

Part No HUF75542S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2750 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 148976-HUF75542S3S
Ultra Librarian 3D Model Ultra Librarian HUF75542S3S CAD Model

Description

The 148976-HUF75542S3S is an N-channel MOSFET transistor from the UltraFET™ series.

  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 75A
  • Maximum On-Resistance: 14mOhm at 75A and 10V gate-source voltage
  • Gate Threshold Voltage: 4V at 250µA
  • Power Dissipation: 230W
  • Mounting: Surface mountable in a TO-263-3, D²Pak package
  • Gate Charge: 180nC at 20V
  • Input Capacitance: 2750pF at 25V drain-source voltage
  • Operating Temperature Range: -55°C to 175°C

It is an active product from Fairchild/ON Semiconductor.

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