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Same model may have multiple batches, images only for reference.
HUF75545S3ST Real Image
Same model may have multiple batches, images only for reference.

HUF75545S3ST

Part No HUF75545S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 235nC @ 20V
Max Input Capacitance 3750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017079-HUF75545S3ST
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HUF75545S3ST CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 80V and a maximum continuous drain current of 75A @ 25°C.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 75A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 235nC @ 20V
  • Maximum Input Capacitance: 3750pF @ 25V
  • Applications: Industrial applications
  • Package: D2PAK (TO-263AB)
  • Power Dissipation: 270W (Tc)

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