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HUF75645S3ST

Part No HUF75645S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 238nC @ 20V
Max Input Capacitance 3790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017081-HUF75645S3ST
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HUF75645S3ST CAD Model

Description

The MOSFET offered by Fairchild/ON Semiconductor Fairchild/ON Semiconductor is a powerful N-channel device that can handle a maximum power dissipation of 310W (Tc) and a continuous drain current of 75A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On: 14 mOhm @ 75A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 238nC @ 20V
  • Device Package: D2PAK (TO-263AB)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Packaging: Reel - TR
  • Units per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.9246 $58.4920
49+ $2.3996 $117.5804
75+ $2.3247 $174.3525
103+ $2.2496 $231.7088
133+ $2.1746 $289.2218
178+ $1.9496 $347.0288
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,479 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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