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Same model may have multiple batches, images only for reference.
HUF76132S3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF76132S3S

Part No HUF76132S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET  /  N-Channel 30 V 75A (Tc) 120W (Tc) Surface Mount TO-263AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series UltraFET™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 25 V
Power Dissipation (Max) 120W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-HUF76132S3S,FAIFSCHUF76132S3S
Standard Package 1
Win Source Part Number 1063693-HUF76132S3S
Ultra Librarian 3D Model Ultra Librarian HUF76132S3S CAD Model

Description

The Fairchild Semiconductor HUF76132S3S UltraFET™ MOSFET is an N-channel transistor with a maximum drain-to-source voltage of 30V and a continuous drain current of 75A @ 25°C.

  • On-resistance: 11mOhm @ 75A and 10V gate-to-source voltage.
  • Gate threshold voltage: 3V
  • Gate charge: 52nC @ 10V gate-to-source voltage.
  • Operating temperature: -40°C to 150°C.
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package suitable for surface-mount applications.
  • Power dissipation: 120W
  • Application: ideal for high-power switching applications.

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