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Same model may have multiple batches, images only for reference.
HUFA75321S3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75321S3ST

Part No HUFA75321S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 35A D2PAK
Datasheet
HUFA75321S3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 20V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204923-HUFA75321S3ST
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75321S3ST CAD Model

Description

The Fairchild/ON Semiconductor HUFA75321S3ST is a MOSFET technology based electronic component.

  • Mounting: SMD (SMT)
  • Polarity: N-Channel
  • Power Dissipation: 93W (Tc)
  • Drive Voltage: 10V
  • Package: D2PAK (TO-263AB)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 35A (Tc) at 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 44nC @ 20V
  • Input Capacitance: 680pF @ 25V
  • Gate-Source Voltage: ±20V
  • Rds On: 34 mOhm @ 35A, 10V
  • Status: Obsolete (EOL)

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Quantity Unit Price Ext. Price
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305+ $0.3319 $101.2295
470+ $0.3215 $151.1050
645+ $0.3112 $200.7240
835+ $0.3008 $251.1680
1,115+ $0.2697 $300.7155
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