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Same model may have multiple batches, images only for reference.
HUFA75329D3 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75329D3

Part No HUFA75329D3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 20A IPAK
Datasheet
HUFA75329D3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 20V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 128W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1044233-HUFA75329D3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75329D3 CAD Model

Description

The HUFA75329D3 is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: HUFA75329D3
  • Type: N-Channel MOSFET
  • Mounting: Through-hole
  • Packaging: TO-251AA
  • Power Dissipation: 128W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 20A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 65nC @ 20V
  • Maximum Input Capacitance: 1060pF @ 25V
  • Maximum Rds On @ Id,Vgs: 26 mOhm @ 20A, 10V
  • Temperature Range: -55°C to 175°C (TJ)

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