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Same model may have multiple batches, images only for reference.
HUFA75345P3 Real Image
Same model may have multiple batches, images only for reference.

HUFA75345P3

Part No HUFA75345P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-220AB
Datasheet
HUFA75345P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 275nC @ 20V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 325W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044251-HUFA75345P3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian HUFA75345P3 CAD Model

Description

The HUFA75345P3 is a N-Channel MOSFET designed by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 325W (Tc)
  • Case/Package: TO-220AB
  • Continuous Drain Current: 75A (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id,Vgs: 7 mOhm @ 75A, 10V
  • Commonly used in: industrial applications
  • Status: obsolete (EOL)
  • Popularity: medium
  • Supply and Demand Status: sufficient

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