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Same model may have multiple batches, images only for reference.
HUFA76432P3 Real Image
Same model may have multiple batches, images only for reference.

HUFA76432P3

Part No HUFA76432P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 59A TO-220AB
Datasheet
HUFA76432P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 1765pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 59A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044289-HUFA76432P3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76432P3 CAD Model

Description

The Fairchild/ON Semiconductor HUFA76432P3 is an N-channel MOSFET that is used in discrete semiconductor products.

  • Maximum Power Dissipation: 130W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On @ Id,Vgs: 17 mOhm @ 59A, 10V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Supply and Demand Status: sufficient

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