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SPP80N06S2L-H5

Part No SPP80N06S2L-H5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6640 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP80N
Other Names INFINFSPP80N06S2L-H5,SPP80N06S2LH5,SP000014001,2156-SPP80N06S2L-H5-IT
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278292-SPP80N06S2L-H5
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2L-H5 CAD Model

Description

The SPP80N06S2L-H5 is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Drain to Source Voltage: 55 V
  • Continuous Drain Current @ 25°C: 80A (Tc)
  • Rds On (Max): 5mOhm @ 80A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
  • Power Dissipation: 300W (Tc)
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Package Type: TO-220-3
  • Supplier Device Package: PG-TO220-3-1

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8466 $59.7786
50+ $2.3358 $116.7900
77+ $2.2628 $174.2356
106+ $2.1898 $232.1188
137+ $2.1168 $290.0016
183+ $1.8978 $347.2974
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,370 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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