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HUFA76619D3

Part No HUFA76619D3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 767pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 123024-HUFA76619D3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA76619D3 CAD Model

Description

The Fairchild/ON Semiconductor 123024-HUFA76619D3 is an N-channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Max): 29nC @ 10V
  • Rds on (Max): 85 mOhm @ 18A, 10V
  • Power Dissipation (Max): 75W (Tc)
  • Mounting: Through hole
  • Packaging: Tube/rail
  • Supply/Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3338 $58.6718
27+ $4.3775 $118.1925
41+ $4.2400 $173.8400
57+ $4.1037 $233.9109
73+ $3.9663 $289.5399
98+ $3.5562 $348.5076
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,380 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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