The Fairchild/ON Semiconductor MOSFET is a N-Channel power MOSFET with a Drain-Source Breakdown Voltage of 100V and a Continuous Drain Current of 39A @ 25°C.

• Channel: N-Channel
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 39A @ 25°C
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 67nC @ 10V
• Maximum Rds On: 35 mOhm @ 39A, 10V
• Power Dissipation (Max): 145W (Tc)
• Technology: MOSFET
• Package: D2PAK (TO-263AB)
• Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Suitable for: Discrete Semiconductor Products
• Mounting: SMD (SMT)
• Status: Obsolete(EOL)
• Temperature Range: -55°C to 175°C (TJ)