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Same model may have multiple batches, images only for reference.
IRFM120ATF Real Image
Same model may have multiple batches, images only for reference.

IRFM120ATF

Part No IRFM120ATF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.3A SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 017621-IRFM120ATF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRFM120ATF CAD Model

Description

The Fairchild/ON Semiconductor 017621-IRFM120ATF is an active N-Channel MOSFET with a power dissipation of 2.4W (Ta).

  • Package: SMD (SMT)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 2.3A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 480pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 200 mOhm @ 1.15A, 10V
  • Package Size: 4k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3760 $52.2720
45+ $2.2256 $100.1520
70+ $2.1504 $150.5280
100+ $2.0000 $200.0000
130+ $1.9249 $250.2370
163+ $1.8497 $301.5011
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Availability: 194,840 pieces
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