The IRFS250 is an N-Channel MOSFET. While the product ID lists Fairchild/ON Semiconductor, the IRFS250 is primarily associated with International Rectifier (now Infineon Technologies). It's designed for high-current, high-voltage power switching applications.

Applications

• High-frequency power converters
• Uninterruptible Power Supplies (UPS)
• Motor drives
• Solar inverters
• Welding equipment

Features

• N-Channel MOSFET
• Voltage Rating: 200V
• Continuous Drain Current: 33A
• On-Resistance (RDS(on)): 0.085 Ohms @ VGS = 10V
• Avalanche Rated
• Fast switching speed

Benefits

• High efficiency due to low on-resistance, minimizing power losses.
• Robust performance under avalanche conditions.
• Simplified gate drive requirements.
• Suited for high-voltage and high-current applications.

Additional Details

The IRFS250 is typically available in a TO-220AB package. It is designed for through-hole mounting. The MOSFET utilizes advanced HEXFET® power MOSFET technology to achieve low on-resistance and fast switching performance. It is RoHS compliant and lead-free. The gate-source voltage is rated at +/- 20V. The power dissipation is specified in datasheets based on specific heatsinking. This MOSFET is commonly used in applications where high efficiency and robust performance are required. The device is well-suited for applications demanding low conduction losses and high switching speeds. It is important to refer to the datasheet for accurate electrical characteristics and operating conditions. Proper heatsinking is crucial for optimal performance.