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IRFW610BTMFP001

Name: IRFW610BTMFP001
Brand: Fairchild/ON Semiconductor
SKU: 981909
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRFW610BTMFP001
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET / N-Channel 200 V 3.3A (Tc) 3.13W (Ta), 38W (Tc) Surface Mount D2PAK
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Fairchild Semiconductor
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 25 V
Power Dissipation (Max)	3.13W (Ta), 38W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	Not applicable
MSL Level	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-IRFW610BTMFP001,FAIFSCIRFW610BTMFP001
Standard Package	800
Win Source Part Number	981909-IRFW610BTMFP001
Ultra Librarian 3D Model	Ultra Librarian IRFW610BTMFP001 CAD Model

Alternative Products

Description

The IRFW610BTMFP001 is an N-channel MOSFET transistor from Fairchild Semiconductor.

Vdss: 200 V
Id: 3.3A (Tc) @ 25°C
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.65A, 10V
Qg (Max) @ Vgs: 9.3 nC @ 10 V
Ciss (Max) @ Vds: 225 pF @ 25 V
Power Dissipation (Max): 3.13W (Ta), 38W (Tc)
Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting: SMT
ECCN: EAR99
MSL: 1 (Unlimited)

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