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Same model may have multiple batches, images only for reference.
IRLW610A Real Image
Same model may have multiple batches, images only for reference.

IRLW610A

Part No IRLW610A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.3A I2PAK
Datasheet
IRLW610A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9nC @ 5V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.65A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069771-IRLW610A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLW610A CAD Model

Description

The IRLW610A is a MOSFET product manufactured by Fairchild/ON Semiconductor.

  • Polarity: N-Channel
  • Mounting Type: Through-hole
  • Package: I2PAK
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 3.3A (Tc)
  • Maximum Rds On at Id, Vgs: 1.5 Ohm @ 1.65A, 5V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Gate Charge: 9nC @ 5V
  • Maximum Input Capacitance: 240pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • For Use In: Discrete semiconductor products
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Limited

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