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Same model may have multiple batches, images only for reference.
IRLW630ATM Real Image
Same model may have multiple batches, images only for reference.

IRLW630ATM

Part No IRLW630ATM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9A I2PAK
Datasheet
IRLW630ATM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 755pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 4.5A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205496-IRLW630ATM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLW630ATM CAD Model

Description

The Fairchild/ON Semiconductor IRLW630ATM is a N-channel MOSFET with a maximum power dissipation of 3.1W (Ta) and 69W (Tc).

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 27nC @ 5V
  • Maximum Input Capacitance: 755pF @ 25V
  • Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 5V
  • Package: I2PAK with TO-262-3 Long Leads, I2Pak, TO-262AA dimensions
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Obsolete (EOL)
  • Supply: Limited

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