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Same model may have multiple batches, images only for reference.
NDB6060L Real Image
Same model may have multiple batches, images only for reference.

NDB6060L

Part No NDB6060L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 48A TO-263AB
Datasheet
NDB6060L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 60nC @ 5V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 24A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 141588-NDB6060L
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NDB6060L CAD Model

Description

The Fairchild/ON Semiconductor 141588-NDB6060L is an N-channel MOSFET with a maximum power dissipation of 100W (Tc) and a continuous drain current of 48A (Tc).

  • Maximum Power Dissipation: 100W (Tc)
  • Continuous Drain Current: 48A (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 60nC @ 5V
  • Maximum Input Capacitance: 2000pF @ 25V
  • Package: D2PAK (TO-263AB)
  • Mounting Style: SMD (SMT)
  • Maximum Rds On at Id,Vgs: 20 mOhm @ 24A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.1692 $50.1844
17+ $5.8824 $100.0008
27+ $5.6986 $153.8622
37+ $5.5147 $204.0439
47+ $5.3309 $250.5523
63+ $4.7794 $301.1022
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