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Same model may have multiple batches, images only for reference.
NDB7060 Real Image
Same model may have multiple batches, images only for reference.

NDB7060

Part No NDB7060
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
NDB7060 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 115nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 40A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 132871-NDB7060
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NDB7060 CAD Model

Description

This N-channel MOSFET is manufactured by Fairchild/ON Semiconductor and has a Win Source Part Number of 132871-NDB7060.

  • Maximum Power Dissipation: 150W (Tc)
  • Mounting Technology: SMD (SMT)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 115nC @ 10V
  • Maximum Input Capacitance: 3600pF @ 25V
  • Maximum Rds On at Id,Vgs: 13 mOhm @ 40A, 10V

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