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Same model may have multiple batches, images only for reference.
NDH832P
Same model may have multiple batches, images only for reference.

NDH832P

Part No NDH832P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.2A SSOT-8
Datasheet
NDH832P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 30nC @ 4.5V
Max Input Capacitance 1000pF @ 10V
Maximum Gate-Source Voltage -8V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-8
Dimension 8-SMD, Gull Wing
Win Source Part Number 060144-NDH832P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDH832P CAD Model

Description

The Fairchild/ON Semiconductor H832P is a P-channel MOSFET that is a part of the Discrete Semiconductor Products family. It is an obsolete (EOL) product with limited supply and demand status. This MOSFET is suitable for use in various electronic devices and equipment. It features a drain-source breakdown voltage of 20V, a continuous drain current of 4.2A @ 25°C, and a maximum power dissipation of 1.8W (Ta).

  • Maximum Rds On: 60 mOhm @ 4.2A and 4.5V

With its reliable and efficient performance, this MOSFET was a great choice for electronic circuits.

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