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Same model may have multiple batches, images only for reference.
NDS8435A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

NDS8435A

Part No NDS8435A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.9A 8-SOIC
Datasheet
NDS8435A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1800pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 7.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060150-NDS8435A
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian NDS8435A CAD Model

Description

The Fairchild/ON Semiconductor 060150-NDS8435A is a P-Channel MOSFET that is used in power management and consumer electronics.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7.9A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 67nC @ 10V
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 7.9A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT)
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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