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Same model may have multiple batches, images only for reference.
NDS9958 Real Image
Same model may have multiple batches, images only for reference.

NDS9958

Part No NDS9958
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 3A 8-SOIC
Datasheet
NDS9958 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 100 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 525pF @ 10V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 109705-NDS9958
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDS9958 CAD Model

Description

The Fairchild/ON Semiconductor NDS9958 is a logic level gate N and P-Channel FET type electronic component that comes in an 8-SO case/package.

  • Maximum Power Dissipation: 900mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.5A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • FET type: ideal for use in discrete semiconductor products
  • Maximum Rds On at Id, Vgs: 100 mOhm @ 3.5A, 10V
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 525pF @ 10V
  • Supply and demand status: limited

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