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RFD3055SM9A

Part No RFD3055SM9A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 20V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 53W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 294016-RFD3055SM9A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RFD3055SM9A CAD Model

Description

The RFD3055SM9A MOSFET is an N-channel transistor manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 12A @ 25°C
  • Applications: power management, motor drive and control, and communications and networking
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 53W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 23nC @ 20V
  • Maximum Input Capacitance: 300pF @ 25V
  • Package: TO-252AA
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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