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Same model may have multiple batches, images only for reference.
SI3445DV Real Image
Same model may have multiple batches, images only for reference.

SI3445DV

Part No SI3445DV
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1926 pF @ 10 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Standard Package 2,219 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 666252-SI3445DV
Ultra Librarian 3D Model Ultra Librarian SI3445DV CAD Model

Description

The 666252-SI3445DV is a P-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 5.5A @ 25°C
  • On-Resistance (Rds On): 33mOhm @ 5.5A and 4.5V gate-source voltage (Vgs)
  • Package: SOT-23-6 Thin
  • Mounting: surface
  • Applications: power management, battery charging, and motor control
  • Gate Charge (Qg): low
  • Input Capacitance (Ciss): low
  • Temperature Range: -55°C to 150°C

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