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Same model may have multiple batches, images only for reference.
SI3454DV Real Image
Same model may have multiple batches, images only for reference.

SI3454DV

Part No SI3454DV
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 15 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Standard Package 671 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 321512-SI3454DV
Ultra Librarian 3D Model Ultra Librarian SI3454DV CAD Model

Description

The SI3454DV is a N-channel MOSFET designed for discrete semiconductor applications.

  • Series: PowerTrench series by Fairchild/ON Semiconductor
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 4.2A @ 25°C
  • Rds On Value: 65mOhm @ 4.2A and 10V
  • Gate Threshold Voltage: 2V @ 250µA
  • Maximum Power Dissipation: 800mW
  • Mounting: surface mountable
  • Package: SOT-23-6 thin or TSOT-23-6
  • Package Quantity: 671 pieces
  • Gate Charge: 15nC @ 10V
  • Input Capacitance: 460pF @ 15V
  • Suitable for: various applications that require efficient power switching and control

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