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Same model may have multiple batches, images only for reference.
SSP1N50B Real Image
Same model may have multiple batches, images only for reference.

SSP1N50B

Part No SSP1N50B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 520 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.3Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 676982-SSP1N50B
Ultra Librarian 3D Model Ultra Librarian SSP1N50B CAD Model

Description

The SSP1N50B is a single N-channel MOSFET in a TO-220-3 package.

  • Application: Discrete Semiconductor Products
  • Sub Category: Transistors, FETs
  • Vdss (Drain to Source Voltage): 520V
  • Id (Continuous Drain Current) @ 25°C: 1.5A
  • Rds On (On-Resistance): 5.3Ohm @ 750mA, 10V
  • Vgs(th) (Gate Threshold Voltage): 4V @ 250μA
  • Power Dissipation: 36W
  • Qg (Gate Charge) @ 10V: 11nC
  • Ciss (Input Capacitance) @ 25V: 340pF
  • Operating Temperature: -55°C to 150°C
  • Packaging: Bulk
  • Manufacturer: Fairchild/ON Semiconductor

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Quantity Unit Price Ext. Price
105+ $0.5550 $58.2750
255+ $0.4555 $116.1525
395+ $0.4412 $174.2740
545+ $0.4270 $232.7150
700+ $0.4127 $288.8900
940+ $0.3701 $347.8940
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Availability: 1,900 pieces
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