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2N5359

Part No 2N5359
Manufacturer Freescale Semiconductor - NXP
Catalog Custom Parts (0 - A)
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Win Source Part Number 1192139-2N5359
Categories Custom Parts
Manufacturer Freescale Semiconductor - NXP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5359 CAD Model

Description

The 2N5359 is a silicon N-channel junction field-effect transistor (JFET) designed for low-noise amplifier applications, particularly at VHF and UHF frequencies. It's known for its high transconductance and low input capacitance, making it suitable for sensitive receiver front-ends and other high-impedance amplifier circuits.

Applications:

  • VHF/UHF Amplifiers: Used as a low-noise amplifier in VHF and UHF receiver front-ends.
  • Mixers: Employed in mixer circuits for signal conversion.
  • Oscillators: Can be used in oscillator circuits for signal generation.
  • RF Preamplifiers: Utilized in RF preamplifiers to boost weak signals.
  • High-Impedance Amplifiers: Suitable for applications requiring high input impedance.

Features:

  • N-Channel JFET: Offers low noise and high gain.
  • High Transconductance: Provides excellent amplification characteristics.
  • Low Input Capacitance: Minimizes signal loading and improves high-frequency performance.
  • High Input Impedance: Allows for efficient signal transfer from high-impedance sources.
  • Low Noise Figure: Ensures minimal signal degradation in sensitive amplifier applications.

Benefits:

  • Improved Signal Reception: Low noise figure enhances the ability to receive weak signals clearly.
  • Increased Amplifier Gain: High transconductance provides significant signal amplification.
  • Reduced Signal Loading: Low input capacitance minimizes signal attenuation.
  • Efficient Signal Transfer: High input impedance ensures optimal signal transfer from source to amplifier.
  • Enhanced System Performance: Overall improvement in the performance of RF and amplifier circuits.

Additional Details:

The 2N5359 is typically supplied in a TO-92 package. Key specifications include a gate-source breakdown voltage (VGS) of around 25V, a drain current (IDSS) ranging from a few milliamperes to tens of milliamperes (dependent on the specific device selection), and a low noise figure (NF) typically less than 3 dB at VHF frequencies. Proper biasing is crucial to achieve optimal performance. It's important to consult the datasheet for precise electrical characteristics and application guidelines. While perhaps superseded by newer devices, it still finds use in legacy equipment and hobbyist projects.

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