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Same model may have multiple batches, images only for reference.
FMW30N60S1HF
Same model may have multiple batches, images only for reference.

FMW30N60S1HF

Part No FMW30N60S1HF
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description IC; MOSFET; N-Channel; Super Junction; 600V; 30A; 200W; TO-247-P2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-247
Continuous Drain Current (ID) 30 A
Drain to Source Breakdown Voltage 600 V
Drain to Source Resistance 125 mΩ
Drain to Source Voltage (Vdss) 600 V
Element Configuration Single
Gate to Source Voltage (Vgs) 30 V
Height 20.955 mm
Input Capacitance 2.2 nF
Length 14.986 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 220 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 220 W
REACH SVHC Unknown
RoHS Compliant
Threshold Voltage 3 V
Turn-Off Delay Time 136 ns
Turn-On Delay Time 31 ns
Width 5.3086 mm
Win Source Part Number 971096-FMW30N60S1HF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FMW30N60S1HF CAD Model

Description

The Fuji Electric FMW30N60S1HF is a transistor that belongs to the FETs and MOSFETs - RF category.

  • Supply and Demand: short supply and high demand
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Power Dissipation: 220 W
  • Drain to Source Voltage: 600 V

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