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Same model may have multiple batches, images only for reference.
G01N20LE
Same model may have multiple batches, images only for reference.

G01N20LE

Part No G01N20LE
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N200V,RD(MAX)<850M@10V,RD(MAX)<9
Datasheet
G01N20LE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376879-G01N20LE
Ultra Librarian 3D Model Ultra Librarian G01N20LE CAD Model

Description

The G01N20LE is an N-Channel MOSFET transistor from Goford Semiconductor.

  • Temperature Range: -55°C to 150°C
  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Drain-to-Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 1.7A
  • Rds On: 850mOhm @ 1.7A and 10V
  • Gate Charge (Qg): 12nC @ 10V
  • Maximum Gate-Source Voltage (Vgs): ±20V

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