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Same model may have multiple batches, images only for reference.
GT110N06S
Same model may have multiple batches, images only for reference.

GT110N06S

Part No GT110N06S
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N60V,RD(MAX)<[email protected],RD(MAX)<1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376756-GT110N06S
Ultra Librarian 3D Model Ultra Librarian GT110N06S CAD Model

Description

The GT110N06S is an N-Channel MOSFET transistor manufactured by Goford Semiconductor. GT110N06S is from Goford Semiconductor.

  • Device Function: Transistor, FET
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Vdss: 60V
  • Id: 14A @ 25°C
  • Rds On: 11mOhm @ 14A, 10V
  • Qg: 24nC @ 10V
  • Vgs: ±20V
  • Power Dissipation: 3W
  • Operating Temperature: -55°C to 150°C
  • RoHS Compliant: Yes

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