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2SD814A-R

Part No 2SD814A-R
Manufacturer Guangdong Kexin Industrial Co.,Ltd
Catalog Transistors (BJT) - Single
Description NPN Transistors
Sample
Rohs State rohs
ECAD Module
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Manufacturer Guangdong Kexin Industrial Co.,Ltd
Win Source Part Number 1126648-2SD814A-R
Manufacturer Homepage www.chinakexin.com/
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SD814A-R CAD Model

Description

The 2SD814A-R is a silicon NPN epitaxial planar transistor manufactured by Guangdong Kexin Industrial Co., Ltd. It's designed for use in various amplifier and switching applications.

Applications:

  • Audio Amplifiers: Used in the amplification stages of audio amplifiers.
  • Switching Circuits: Employed as a switching element in various electronic circuits.
  • Power Amplification: Utilized in power amplification stages in electronic devices.
  • General Purpose Amplification: Used for general-purpose signal amplification in various applications.
  • Driver Stages: Implemented in driver stages for driving higher-power devices.

Features:

  • NPN Transistor: Offers NPN transistor characteristics for amplification and switching.
  • High Collector Current: Capable of handling high collector currents.
  • Low Saturation Voltage: Provides low saturation voltage for efficient switching.
  • Epitaxial Planar Construction: Ensures high reliability and performance.
  • RoHS Compliant: Meets environmental standards for hazardous substances.

Benefits:

  • Efficient Amplification: Provides efficient signal amplification in various circuits.
  • Reliable Switching: Offers reliable switching performance in electronic applications.
  • High Power Handling: Capable of handling high power levels in amplification stages.
  • Stable Performance: Ensures stable performance in different operating conditions.

Additional Details:

The 2SD814A-R is characterized by its collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PC). Its typical specifications include a collector-emitter voltage of around 60V and a collector current of several amperes. It also features a relatively high current gain (hFE), making it suitable for amplifying weak signals. The "-R" suffix might denote a specific gain range or packaging variant. Consult the official datasheet from Guangdong Kexin Industrial Co., Ltd. for precise specifications and performance curves, including thermal characteristics and safe operating area.

This transistor is designed to provide reliable and efficient performance in a variety of amplification and switching applications, offering a balance of power handling and signal amplification capabilities.

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