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Same model may have multiple batches, images only for reference.
IRF532
Same model may have multiple batches, images only for reference.

IRF532

Part No IRF532
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 195 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875012-IRF532
Ultra Librarian 3D Model Ultra Librarian IRF532 CAD Model

Description

The 875012-IRF532 is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for discrete semiconductor applications.

  • Vdss: 100V
  • Id: 12A @ 25°C
  • Rds On: 230mOhm @ 8.3A and 10V Vgs
  • Vgs(th): 4V @ 250µA
  • Mounting: through hole
  • Package: TO-220-3
  • Power Dissipation: 79W
  • Temperature Range: -55°C to 150°C
  • Status: active product

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.8626 $57.9390
37+ $3.1693 $117.2641
57+ $3.0704 $175.0128
78+ $2.9713 $231.7614
101+ $2.8723 $290.1023
135+ $2.5751 $347.6385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,730 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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