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IRF631

Part No IRF631
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604417-IRF631
Ultra Librarian 3D Model Ultra Librarian IRF631 CAD Model

Description

The IRF631 is an N-channel MOSFET transistor in a TO-220-3 package.

  • Drain-to-Source Voltage: Has a drain-to-source voltage rating of 150V.
  • Drain Current: Has a continuous drain current rating of 9A @ 25°C.
  • On-Resistance: Has a maximum on-resistance of 400mOhm @ a drain current of 5A and a gate-source voltage of 10V.
  • Gate Threshold Voltage: Has a gate threshold voltage of 4V.
  • Power Dissipation: Has a power dissipation of 75W @ a case temperature of 25°C.
  • Mounting: Is suitable for through-hole mounting.
  • Applications: Is commonly used in applications requiring high power switching.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3397 $60.2865
110+ $1.0993 $120.9230
165+ $1.0649 $175.7085
225+ $1.0306 $231.8850
290+ $0.9962 $288.8980
390+ $0.8932 $348.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,300 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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