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IRF831

Part No IRF831
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 232 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604712-IRF831
Ultra Librarian 3D Model Ultra Librarian IRF831 CAD Model

Description

The 604712-IRF831 is a single N-channel MOSFET used for discrete semiconductor applications.

  • Channel Type: N-channel
  • Application: Discrete Semiconductor
  • Drain to Source Voltage: 450V
  • Continuous Drain Current: 4.5A @ 25°C
  • Maximum On-Resistance: 1.5Ohm @ a drain current of 2.5A and gate voltage of 10V
  • Gate Threshold Voltage: 4V @ a drain current of 250μA
  • Power Dissipation: 75W @ a case temperature of Tc
  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Standard Package Quantity: 232 pieces
  • Operating Temperature Range: -55°C to 150°C
  • Product Status: Active
  • Manufacturer: Harris Corporation

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7146 $50.0220
175+ $0.5864 $102.6200
265+ $0.5680 $150.5200
365+ $0.5497 $200.6405
475+ $0.5314 $252.4150
630+ $0.4764 $300.1320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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