The IRF9621 is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for high voltage, high speed power switching applications.

• Drain to Source Voltage (Vdss): 150V
• Continuous Drain Current (Id): 3.5A @ 25°C
• Maximum on-resistance (Rds On): 1.5Ohm @ a drain current of 1.5A and a gate-source voltage (Vgs) of 10V
• Gate Threshold Voltage (Vgs(th)): 4V @ a drain current of 250μA
• Maximum Power Dissipation: 40W
• Mounting: Through-hole
• Package: TO-220-3
• Gate Charge (Qg): 22nC @ a gate-source voltage (Vgs) of 10V
• Input Capacitance (Ciss): 350pF @ a drain-source voltage (Vds) of 25V
• Operating Temperature Range: -55°C to 150°C
• Manufacturer: Harris Corporation
• Status: Active