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Same model may have multiple batches, images only for reference.
IRFF9130 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFF9130

Part No IRFF9130
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 6.5A, 100V, 0.3OHM, P-CHANNEL MO
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-205AF (TO-39)
Package / Case TO-205AF Metal Can
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 160374-IRFF9130
Ultra Librarian 3D Model Ultra Librarian IRFF9130 CAD Model

Description

The 160374-IRFF9130 is an N-channel MOSFET transistor designed for various applications.

  • Drain to Source Voltage: 100V
  • Continuous Drain Current @ 25°C: 6.5A
  • Maximum On-Resistance: 300mΩ @ 3A and 10V gate-source voltage
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Power Dissipation: 25W
  • Package: TO-205AF Metal Can
  • Mounting: allows for easy through-hole mounting
  • Manufacturer: Harris Corporation
  • Status: active product in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.6657 $81.3314
4+ $33.3667 $133.4668
6+ $32.3240 $193.9440
8+ $31.2813 $250.2504
10+ $30.2386 $302.3860
13+ $27.1105 $352.4365
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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