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Same model may have multiple batches, images only for reference.
RF1S70N03 Intersil
Same model may have multiple batches, images only for reference.

RF1S70N03

Part No RF1S70N03
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 70A TO262AA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Rds On (Max) @ Id, Vgs 10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262AA
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 293228-RF1S70N03
Ultra Librarian 3D Model Ultra Librarian RF1S70N03 CAD Model

Description

The 293228-RF1S70N03 is an N-Channel MOSFET transistor designed for discrete semiconductor applications.

  • Vdss: 30V
  • Id: 70A @ 25°C
  • Rds On (Max): 10mOhm @ 70A and 10V
  • Gate Charge (Qg): 260nC @ 20V
  • Package: TO-262-3
  • Mounting Type: Through-hole
  • Power Dissipation: 150W
  • Operating Temperature: -55°C to 175°C
  • Manufacturer: Harris Corporation
  • Status: Active
  • Usage: Widely used in the electronics industry

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3585 $58.9625
60+ $1.9346 $116.0760
93+ $1.8746 $174.3378
128+ $1.8145 $232.2560
165+ $1.7533 $289.2945
221+ $1.5720 $347.4120
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