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Same model may have multiple batches, images only for reference.
RF1S9530 Intersil
Same model may have multiple batches, images only for reference.

RF1S9530

Part No RF1S9530
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description -12A, -100V, 0.3 OHM, P-CHANNEL
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 293229-RF1S9530
Ultra Librarian 3D Model Ultra Librarian RF1S9530 CAD Model

Description

The 293229-RF1S9530 is a P-channel MOSFET from Harris Corporation.

  • Vdss: 100V
  • Id: 12A @ 25°C
  • Rds On (Max): 300mOhm @ 6.5A and 10V
  • Package: TO-262-3 Long Leads, I²Pak
  • Mounting Type: Through-hole
  • Gate Charge (Qg): 45nC @ 10V
  • Input Capacitance (Ciss): 500pF @ 25V
  • Series: Active product lineup from Harris Corporation
  • Application: Suitable for power supply applications and motor control

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