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Same model may have multiple batches, images only for reference.
RFP25N06L
Same model may have multiple batches, images only for reference.

RFP25N06L

Part No RFP25N06L
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL, MOSFET / N-Channel 60 V 25A (Tc) 75W (Tc) Through Hole TO-220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 85mOhm @ 12.5A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARRFP25N06L,2156-RFP25N06L
Standard Package 1
Win Source Part Number 1119120-RFP25N06L
Ultra Librarian 3D Model Ultra Librarian RFP25N06L CAD Model

Description

The RFP25N06L is an N-channel MOSFET transistor with a drain to source voltage of 60V and a continuous drain of 25A @ 25°C. It has an Rds On (Max) of 85mOhm @ 12.5A and 5V.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (ID): 25A @ 25°C
  • Rds On (Max): 85mOhm @ 12.5A, 5V
  • Manufacturer: Harris Corporation
  • Win Source Part Number: 1119120-RFP25N06L
  • Mounting Type: through-hole
  • Package/Case: TO-220-3
  • RoHS Compliance: non-compliant

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