The 2SC5080 is a silicon NPN epitaxial planar transistor manufactured by Hitachi, Ltd. It is designed for high-frequency amplifier applications, particularly in VHF and UHF bands. Its low noise figure and high gain make it suitable for use in communication equipment, television tuners, and other high-performance RF circuits.

Applications

• VHF/UHF Amplifiers: Used as a low-noise amplifier in VHF and UHF receiver front-ends.
• Television Tuners: Employed in television tuners for signal amplification and low-noise performance.
• Communication Equipment: Integrated into communication devices such as transceivers and radio receivers.
• RF Oscillators: Used in oscillator circuits for generating high-frequency signals.
• Mixer Circuits: Employed as a mixer in frequency conversion stages of receivers and transmitters.

Features

• NPN Silicon Epitaxial Planar Transistor: Provides high-frequency performance and reliability.
• Low Noise Figure: Ensures minimal noise amplification in sensitive receiver circuits.
• High Gain: Provides significant signal amplification for improved receiver sensitivity.
• High Transition Frequency (fT): Allows for operation in high-frequency applications.
• Small Signal Amplifier: Designed for amplifying small signals with minimal distortion.
• Collector-Emitter Voltage (VCEO): Supports a reasonable collector-emitter voltage for versatile applications.

Benefits

• Improved Receiver Sensitivity: Low noise figure enhances the ability to detect weak signals.
• Enhanced Signal Amplification: High gain provides a significant increase in signal strength.
• High-Frequency Performance: Suitable for use in VHF and UHF applications due to its high transition frequency.
• Reliable Operation: Silicon epitaxial planar construction ensures reliable and stable performance.
• Versatile Applications: Can be used in a variety of RF circuits, including amplifiers, oscillators, and mixers.

Specifications

The 2SC5080 transistor typically features a collector-emitter voltage (VCEO) of 20V, a collector current (IC) of 30mA, and a power dissipation (PC) of 200mW. Its transition frequency (fT) is typically around 2 GHz. The noise figure (NF) is typically 2dB at 200 MHz. The current gain (hFE) is typically between 50 and 200, depending on the specific operating conditions.