The 080N03LS is a OptiMOS™ power MOSFET from Infineon Technologies, designed for synchronous rectification and DC-DC converter applications. This N-channel MOSFET features low on-state resistance (RDS(on)) and fast switching speed, contributing to high efficiency and reduced power losses.

Applications:

• Synchronous rectification in SMPS
• DC-DC converters
• Point-of-Load (POL) converters
• OR-ing FETs
• Battery management systems

Features:

• N-Channel MOSFET
• Low RDS(on) for reduced conduction losses
• Fast switching speed for high-frequency operation
• Logic level drive capability
• Avalanche rated
• Pb-free lead finish; RoHS compliant

Benefits:

• High efficiency reduces energy consumption and heat generation.
• Improved power density enables smaller and lighter designs.
• Simplified gate drive circuitry reduces system cost.
• Robust performance in demanding applications.
• Environmentally friendly due to Pb-free and RoHS compliance.

Technical Specifications:

Transistor Type: N-Channel

Drain-Source Voltage (VDS): 30 V

Gate-Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): 80 A

On-State Resistance (RDS(on)): 4.2 mOhms @ VGS=10V

Gate Threshold Voltage (VGS(th)): 2.0V

Total Gate Charge (Qg): 35 nC

Operating Temperature Range: -55°C to +175°C

Package: PG-TDSON-8