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Same model may have multiple batches, images only for reference.
2N7002H6327XTSA2 Real Image
Same model may have multiple batches, images only for reference.

2N7002H6327XTSA2

Part No 2N7002H6327XTSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.3A SOT23
Datasheet
2N7002H6327XTSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.6nC @ 10V
Max Input Capacitance 20pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 113375-2N7002H6327XTSA2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2N7002H6327XTSA2 CAD Model

Description

Overview

The 2N7002H6327XTSA2 is a versatile MOSFET transistor, offering a superior balance of performance and power efficiency. Its robust construction allows for consistent operation across various conditions.

Features and Benefits

  • Enhanced power dissipation
  • Optimized gate charge
  • Reliable thermal stability

Applications

  • Digital circuits
  • Amplifiers
  • Motor drivers
  • Power management systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
270+ $0.1883 $50.8410
650+ $0.1545 $100.4250
1,005+ $0.1497 $150.4485
1,385+ $0.1448 $200.5480
1,790+ $0.1400 $250.6000
2,395+ $0.1255 $300.5725
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,555 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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