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Same model may have multiple batches, images only for reference.
47N65C3 Real Image
Same model may have multiple batches, images only for reference.

47N65C3

Part No 47N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 47A TO-247
Datasheet
47N65C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 2.7mA
Max Gate Charge 255nC @ 10V
Max Input Capacitance 7000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 415W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 075821-47N65C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 47N65C3 CAD Model

Description

Product Description

The 47N65C3 is a versatile N-channel MOSFET that excels in high-temperature operations with increased energy efficiency. Its low on-resistance ensures minimal power dissipation, making it a preferred choice for power-intensive applications.
  • Applications:
    • Inverters
    • Power factor correction circuits (PFC)
    • Uninterruptible power supplies (UPS)
    • Electric vehicle infrastructure
  • Features and Benefits:
    • Low gate charge for fast switching
    • Superior avalanche ruggedness
    • High reliability in harsh environments
  • Additional Details: The 47N65C3 is engineered to meet the demands of both industrial and consumer electronics by providing reliable, efficient performance.

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