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AUIRF1010EZ

Part No AUIRF1010EZ
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N CHANNEL
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 8.5mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2810 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 239 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567075-AUIRF1010EZ
Ultra Librarian 3D Model Ultra Librarian AUIRF1010EZ CAD Model

Description

The 567075-AUIRF1010EZ is a N-Channel MOSFET (Metal Oxide) transistor from Infineon Technologies.

  • Series: HEXFET™
  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 75A (Tc) @ 25°C
  • Rds On (Max): 8.5mOhm @ 51A, 10V
  • Gate Charge (Qg): 86 nC @ 10 V
  • Input Capacitance (Ciss): 2810 pF @ 25 V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Standard Package: 239 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3196 $52.7840
95+ $1.0828 $102.8660
145+ $1.0489 $152.0905
200+ $1.0151 $203.0200
255+ $0.9813 $250.2315
345+ $0.8797 $303.4965
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,880 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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