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AUIRF1405

Part No AUIRF1405
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5480 pF @ 25 V
Power Dissipation (Max) 330W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 162 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567084-AUIRF1405
Ultra Librarian 3D Model Ultra Librarian AUIRF1405 CAD Model

Description

The AUIRF1405 is a N-Channel MOSFET transistor designed for various applications. Bold the product name (e.g., BAV99S,135 → BAV99S,"135") and manufacturer (e.g., Nexperia USA Inc. → Nexperia USA Inc.).

  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id) @ 25°C: 75A
  • On-Resistance (Rds On) @ 101A, 10V: 5.3mOhm
  • Gate-Source Threshold Voltage (Vgs(th)) @ 250μA: 4V
  • Maximum Power Dissipation: 330W
  • Operating Temperature Range: -55°C to 175°C
  • Mounting Type: Through-Hole
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3052 $58.7340
110+ $1.0707 $117.7770
170+ $1.0372 $176.3240
235+ $1.0037 $235.8695
300+ $0.9702 $291.0600
400+ $0.8697 $347.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 104,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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