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Same model may have multiple batches, images only for reference.
AUIRF5210S Real Image
Same model may have multiple batches, images only for reference.

AUIRF5210S

Part No AUIRF5210S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 38A D2PAK
Datasheet
AUIRF5210S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567109-AUIRF5210S
Ultra Librarian 3D Model Ultra Librarian AUIRF5210S CAD Model

Description

The AUIRF5210S is a single P-channel power MOSFET designed for high-performance applications.

  • Drain-to-Source Voltage: 100V
  • Continuous Drain Current: 38A @ 25°C
  • Rds On (Max): 60mOhm @ 38A, 10V
  • Vgs(th): 4V @ 250μA
  • Suitable for: applications that require efficient power management and switching
  • Series: Infineon Technologies HEXFET series
  • Design: surface mount
  • Package: compact

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55+ $6.3444 $348.9420
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Availability: 1,600 pieces
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